Marco Puglisi

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

Marco Mauceri, Antonino Pecora, Grazia Litrico et al. · Materials science forum · 2014 · 17 citations

Materials Engineering, Nuclear Ceramic, Electrical Engineering +9

(Invited) Three-Dimensional Epitaxial Si_1-XGe_x, Ge and SiC Crystals on Deeply Patterned Si Substrates

H. von Känel, Fabio Isa, C.V. Falub et al. · ECS Transactions · 2014 · 16 citations

Engineering, Deep Substrate Patterning, Geometric Shielding +18

Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning

H. von Känel, Leo Miglio, Danilo Crippa et al. · Materials science forum · 2015 · 13 citations

Materials Engineering, Materials Science, Electrical Engineering +14

3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates

Thomas Kreiliger, Marco Mauceri, Marco Puglisi et al. · Materials science forum · 2016 · 12 citations

Materials Science, Materials Engineering, Si Pillars +12

Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

Mojmír Meduňa, Thomas Kreiliger, Iván Prieto et al. · Materials science forum · 2016 · 11 citations

Materials Engineering, Materials Science, Epitaxial Growth +13