4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

Abstract

Preliminary results of 150mm SiC 4H 4°off have been obtained with the new 150mm automatic horizontal hot wall reactor PE1O6, using chlorinated chemistry (SiHCl 3 + C 2 H 4 ). A new injection system has been tested in two configurations and results will be shown in this paper. AFM surface roughness measurements and epi defect density have been reported.