Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning

Abstract

The heteroepitaxial growth of 3 C -SiC on Si (001) and Si (111) substrates deeply patterned at a micron scale by low-pressure chemical vapor deposition is shown to lead to space-filling isolated structures resulting from a mechanism of self-limitation of lateral expansion. Stacking fault densities and wafer bowing may be drastically reduced for optimized pattern geometries.