B. Y. Maa

Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD

Steven P. DenBaars, B. Y. Maa, P.D. Dapkus et al. · Journal of Crystal Growth · 1986 · 169 citations

Materials Engineering, Ii-vi Semiconductor, Electrical Engineering +7

Atmospheric pressure atomic layer epitaxy: mechanisms and applications

P.D. Dapkus, B. Y. Maa, Q. Chen et al. · Journal of Crystal Growth · 1991 · 40 citations

Engineering, Physics, Surface Science +5

Reflectance-difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine

B. Y. Maa, P.D. Dapkus · Applied Physics Letters · 1991 · 36 citations

Engineering, Atomic Layer Epitaxy, Ultrahigh Vacuum Environment +17

RHEED and XPS observations of trimethylgallium adsorption on GaAs (001) surfaces—Relevance to atomic layer epitaxy

B. Y. Maa, P.D. Dapkus · Journal of Electronic Materials · 1990 · 17 citations

Semiconductors, Surface Characterization, Engineering +10

Studies of TMGa adsorption on thin GaAs and InAs (001) layers

B. Y. Maa, P.D. Dapkus · Journal of Crystal Growth · 1990 · 15 citations

Materials Science, Engineering, Surface Science +6