Y. Yamane

Fully electrical 40-Gb/s TDM system prototype based on InP HEMT digital IC technologies

M. Yoneyama, Y. Miyamoto, Taiichi Otsuji et al. · Journal of Lightwave Technology · 2000 · 36 citations · Full text

Engineering, Communication, Electrical Engineering +17

Characteristics including electron velocity overshoot for 0.1- mu m-gate-length GaAs SAINT MESFET's

T. Enoki, S. Sugitani, Y. Yamane · IEEE Transactions on Electron Devices · 1990 · 35 citations

Engineering, Electrical Engineering, Microelectronics +13

A 0.2 mu m GaAs MESFET technology for 10 Gb/s digital and analog ICs

Y. Yamane, M. Ohhata, Hiroyuki Kikuchi et al. · 2002 · 33 citations

Engineering, Electrical Engineering, Analog Electronics +16

Controlled fabrication of Mo-seeded Si microcones by Ar+-ion bombardment

Masaki Tanemura, Hirofumi Yamauchi, Y. Yamane et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 30 citations

Engineering, Materials Engineering, Materials Science +14

45 Gbit/s decision IC module using InAlAs/InGaAs/InPHEMTs

Koichi Murata, Taiichi Otsuji, Y. Yamane · Electronics Letters · 1999 · 25 citations

Engineering, Computer Engineering, Electrical Engineering +9