A 0.2 mu m GaAs MESFET technology for 10 Gb/s digital and analog ICs

Abstract

A 0.2 mu m gate length GaAs IC technology is reported. This technology enables the fabrication of both digital and analog ICs using the same process. A 10 Gb/s decision circuit with a 130 mV sensitivity and 215 degrees phase margin, and an amplifier with a 20 dB gain and 13 GHz bandwidth were successfully fabricated using this unified process technology.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>