Soroush Faramehr

Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application

Soroush Faramehr, K. Kálna, Petar Igić · Semiconductor Science and Technology · 2014 · 40 citations · Full text

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications

Soroush Faramehr, K. Kálna, Petar Igić · Semiconductor Science and Technology · 2014 · 16 citations

Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

Petar Igić, Nebojša Janković, J. Evans et al. · IEEE Electron Device Letters · 2018 · 15 citations

Magnetism, Electrical Engineering, Constant Sensitivity +11

Analysis of GaN HEMTs Switching Transients Using Compact Model

Soroush Faramehr, Petar Igić · IEEE Transactions on Electron Devices · 2017 · 14 citations

Device Modeling, Gan Power Hemt, Electrical Engineering +8

DC Power Line Communication (PLC) on 868 MHz and 2.4 GHz Wired RF Transceivers

Vlad Marsic, Tazdin Amietszajew, Petar Igić et al. · Sensors · 2022 · 14 citations · Full text

Electrical Engineering, Engineering, Radio Frequency +14