J. M. Grow - Concepedia

Author

J. M. Grow

New Jersey Institute of Technology

Also Known As

D Agrawal, J. Grow, J. M Grow, J. M. GROW, J. M. Grow, J.M Grow, J.M. Grow, James Grow, James M. Grow, Joseph L. Grow

Publications

574

Citations

H-Index

Concepts

All Affiliations

New Jersey Institute of Technology University of Florida KTH Royal Institute of Technology Olin Corporation (United States)Sandia National Laboratories

About

J. M. Grow is an author at New Jersey Institute of Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	384
2	Applied Physics	10	10	325
3	Chemical Engineering	6	6	142
4	Chemistry	5	5	123
5	Electrical Engineering	2	2	40

J. M. Grow

Publications

448

Citations

H-Index

Page 1

	Year	Citations
Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries J. J. Wang, E. S. Lambers, S. J. Pearton, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringEngineeringN+ SicPlasma Processing	1998	64
ICP etching of SiC J. J. Wang, E. S. Lambers, S. J. Pearton, Solid-State Electronics Materials EngineeringMaterials ScienceEngineeringApplied PhysicsSemiconductor Device Fabrication	1998	54
Comparison of dry etch chemistries for SiC Garrett McDaniel, J. W. Lee, E. S. Lambers, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials EngineeringMaterials ScienceDry Etch ChemistriesHydrogen PassivationEngineering	1997	49
Low pressure chemical vapor deposition of B-N-C-H films from triethylamine borane complex R. Lévy, E. Mastromatteo, J. M. Grow, Journal of materials research/Pratt's guide to venture capital sources Chemical EngineeringBoron NitrideEngineeringB-n-c-h FilmsSurface Science	1995	37
The effect of liquid gallium on the strengths of stainless steel and thermoplastics K. A. Narh, Vivek P. Dwivedi, J. M. Grow, Journal of Materials Science	1998	27
High rate etching of SiC and SiCN in NF3 inductively coupled plasmas J. J. Wang, E. S. Lambers, S. J. Pearton, Solid-State Electronics Materials EngineeringElectrical EngineeringEngineeringNanoelectronicsApplied Physics	1998	27
Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor R. Lévy, Xi Lin, J. M. Grow, Journal of materials research/Pratt's guide to venture capital sources Chemical EngineeringEngineeringSilane PrecursorSurface ScienceApplied Physics	1996	26
Low Pressure Chemical Vapor Deposition of Silicon Carbide from Ditertiarybutylsilane J. M. Grow, R. Lévy, Madhu Bhaskaran, Journal of The Electrochemical Society EngineeringSingle PrecursorSilicon CarbideThin Film Process TechnologyChemistry	1993	26
Electrical and compositional properties of TaSi2 films Nuggehalli M. Ravindra, Lei Jin, Dentcho V. Ivanov, Journal of Electronic Materials Materials EngineeringMaterials ScienceEngineeringOxide ElectronicsApplied Physics	2002	21
Low Pressure Chemical Vapor Deposition of Silicon Carbide from Diethylsilane J. M. Grow, R. Lévy, Y. T. Shi, Journal of The Electrochemical Society EngineeringAmorphous FilmsSingle PrecursorSilicon CarbideThin Film Process Technology	1993	21

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