S. Balboni

TEM/CBED determination of strain in silicon-based submicrometric electronic devices

A. Armigliato, R. Balboni, S. Balboni et al. · Micron · 2000 · 27 citations · Full text

Electrical Engineering, Engineering, Applied Physics +6

Atomistic modeling of ion channeling in Si with point defects: The role of lattice relaxation

S. Balboni, E. Albertazzi, M. Bianconi et al. · Physical review. B, Condensed matter · 2002 · 20 citations

Point Defects, Engineering, Point Defect Type +17

Channeling characterization of defects in silicon: an atomistic approach

M. Bianconi, E. Albertazzi, S. Balboni et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2005 · 15 citations

Atomistic Approach, Engineering, Physics +6

Atomistic simulation of ion channeling in heavily doped Si:As

A. Satta, E. Albertazzi, M. Bianconi et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2005 · 13 citations

Ion Implantation, Engineering, Physics +5

Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters

G. Lulli, E. Albertazzi, M. Bianconi et al. · Physical Review B · 2004 · 11 citations

Point Defects, Nuclear Physics, Engineering +20