A. Gouyé

Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)

A. Gouyé, O. Kermarrec, A. Halimaoui et al. · Journal of Crystal Growth · 2009 · 40 citations

Materials Science, Materials Engineering, Si1−ycy Films +9

Interrupted Self-Organization of SiGe Pyramids

Jean‐Noël Aqua, A. Gouyé, A. Ronda et al. · Physical Review Letters · 2013 · 26 citations

Engineering, Geometry, Soft Matter +18

Accommodation of SiGe strain on a universally compliant porous silicon substrate

Isabelle Berbézier, Jean‐Noël Aqua, Mansour Aouassa et al. · Physical Review B · 2014 · 24 citations

Engineering, Mechanical Engineering, Electronic Properties +20

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

N. Cherkashin, Martin Hÿtch, Florent Houdellier et al. · Applied Physics Letters · 2009 · 12 citations · Full text

Engineering, Substitutional Concentration, Silicon On Insulator +16

Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures

A. Gouyé, Isabelle Berbézier, Luc Favre et al. · Applied Physics Letters · 2010 · 12 citations