J. F. Chen

A new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode and its tunneling mechanism

Long Yang, J. F. Chen, A. Y. Cho · Journal of Applied Physics · 1990 · 40 citations

Electrical Engineering, Engineering, Tunneling Microscopy +11

Characterization of Te-doped GaSb grown by molecular beam epitaxy using SnTe

J. F. Chen, A. Y. Cho · Journal of Applied Physics · 1991 · 36 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +11

InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature

J. F. Chen, Ming C. Wu, Alfred Y. CHO · Journal of Applied Physics · 1990 · 27 citations

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +13

Improvement of peak-to-valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

M. P. Houng, Y. H. Wang, Ching-Liang Shen et al. · Applied Physics Letters · 1992 · 18 citations

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +12

RET masks for the final frontier of optical lithography

J. F. Chen, Douglas Van Den Broeke, Stephen Hsu et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2005 · 11 citations