M. P. Houng

Extremely low temperature formation of silicon dioxide on gallium arsenide

M. P. Houng, C. J. Huang, Y. H. Wang et al. · Journal of Applied Physics · 1997 · 34 citations

Engineering, Electrical Engineering, Materials Science +15

Normal incidence intersubband optical transition in GaSb/InAs superlattices

H. H. Chen, M. P. Houng, Y. H. Wang et al. · Applied Physics Letters · 1992 · 21 citations · Full text

Natural Sciences, Materials Science, Physics +17

Improvement of peak-to-valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

M. P. Houng, Y. H. Wang, Ching-Liang Shen et al. · Applied Physics Letters · 1992 · 18 citations

Engineering, Materials Engineering, Materials Science +17

Charge trapping behavior of SiO2-Anodic Al2O3–SiO2 gate dielectrics for nonvolatile memory applications

Chun-Hsien Huang, En-Jui Li, Wai-Jyh Chang et al. · Solid-State Electronics · 2009 · 12 citations

Natural Sciences, Materials Engineering, Materials Science +12

High efficiency a-Si:H/a-Si:H solar cell with a tunnel recombination junction and a n-type μc-Si:H layer

Ping-Kuan Chang, Chun-Hsiung Lu, Chih-Hung Yeh et al. · Thin Solid Films · 2012 · 10 citations

Engineering, Materials Engineering, Materials Science +17