Improvement of peak-to-valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

Abstract

InAs blocking layer is incorporated into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure to improve the peak-to-valley ratios. It is found the ratio rises to 21 at room temperature and the peak current density keeps nearly constant for InAs layer reaches 30 A and then both of them decreases with the increase of InAs thickness. However, while the InAs blocking layer further increases to 240 A, the I-V characteristic shows multiple negative differential resistance behavior. These interesting phenomena can be modeled to be due to the coupling effect of InAs blocking layer and GaSb well layer.