P.J. van der Wel

Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

E. Skuras, Ranjan Kumar, Robin L. Williams et al. · Semiconductor Science and Technology · 1991 · 85 citations

Engineering, Materials Science, Physics +17

Carrier-concentation-dependent electron<i>–</i>LO-phonon coupling observed in GaAs-(Ga,Al)As heterojunctions by resonant-polaron cyclotron resonance

C. J. G. M. Langerak, John Singleton, P.J. van der Wel et al. · Physical review. B, Condensed matter · 1988 · 69 citations

Natural Sciences, Materials Science, Physics +17

Operating limits for RF power amplifiers at high junction temperatures

Z. Radivojević, Klas Andersson, J.A. Bielen et al. · Microelectronics Reliability · 2004 · 36 citations

Engineering, Electrical Engineering, Materials Science +14

De Haas-van Alphen effect in the superconducting state

R. Corcoran, N. M. Harrison, C. Haworth et al. · Physica B Condensed Matter · 1995 · 35 citations

Natural Sciences, Materials Science, Physics +14

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

M. Dammann, W. Pletschen, Patrick Waltereit et al. · Microelectronics Reliability · 2009 · 29 citations

Engineering, Electrical Engineering, Materials Science +16