B. Bastek - Concepedia

Author

B. Bastek

Otto-von-Guericke University Magdeburg

Also Known As

B Bastek, B. Bastek, Barbara Bastek

Publications

395

Citations

H-Index

Concepts

All Affiliations

Otto-von-Guericke University Magdeburg Technische Universität Berlin Ferdinand-Braun-Institut

About

B. Bastek is an author at Otto-von-Guericke University Magdeburg specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	370
2	Applied Physics	7	7	286
3	Electrical Engineering	3	3	114
4	Chemistry	2	2	178
5	Materials Engineering	1	1	84

B. Bastek

Publications

370

Citations

H-Index

Page 1

	Year	Citations
Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets Yongfeng Mei, Dominic J. Thurmer, Christoph Deneke, ACS Nano Materials ScienceAluminium NitrideUltrathin Aln/ganEngineeringNanoporous Material	2009	94
MOVPE growth of high-quality AlN A. Dadgar, A. Krost, J. Christen, Journal of Crystal Growth Materials EngineeringMaterials ScienceAluminium NitrideEngineeringCrystal Growth Technology	2006	84
Structural and optical properties of nonpolar GaN thin films Zhihao Wu, Alec M. Fischer, F. A. Ponce, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineering	2008	61
Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy B. Bastek, F. Bertram, Juergen Christen, Applied Physics Letters Materials ScienceSystematic Cathodoluminescence StudyAluminium NitridePhotoluminescencePoint Defects	2009	40
A -plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy B. Bastek, F. Bertram, J. Christen, Applied Physics Letters Wide-bandgap SemiconductorEngineeringStripe MasksMorphological DefectsLuminescence Property	2008	36
Excitonic transport in ZnO Martin Noltemeyer, F. Bertram, Thomas Hempel, Journal of materials research/Pratt's guide to venture capital sources Quantum ScienceExcitonic TransportEngineeringPhysicsCondensed Matter Physics	2012	25
Heavy Si doping: The key in heteroepitaxial growth of a‐plane GaN without basal plane stacking faults? Matthias Wieneke, Martin Noltemeyer, B. Bastek, physica status solidi (b) SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2010	17
Growth and surface characterization of magnetron sputtered zinc nitride thin films Jebreel M. Khoshman, Niculina Peica, C. Thomsen, Thin Solid Films Materials ScienceSurface CharacterizationBoron NitrideEngineeringSurface Science	2012	13

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