Leonard F. Register

Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Leonard F. Register, Elyse Rosenbaum, Kevin Yang · Applied Physics Letters · 1999 · 236 citations

Engineering, Electrical Engineering, Microelectronics +16

Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

Sanjay K. Banerjee, Leonard F. Register, Emanuel Tutuc et al. · IEEE Electron Device Letters · 2009 · 216 citations

Engineering, Computer Engineering, Electrical Engineering +17

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva et al. · Nano Letters · 2015 · 212 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Mechanism of stress-induced leakage current in MOS capacitors

Elyse Rosenbaum, Leonard F. Register · IEEE Transactions on Electron Devices · 1997 · 200 citations

Engineering, Electrical Engineering, Materials Science +17

Graphene field-effect transistors

Dharmendar Reddy, Leonard F. Register, Gary D. Carpenter et al. · Journal of Physics D Applied Physics · 2011 · 172 citations

Natural Sciences, Materials Science, Physics +14