Leonard F. Register

Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Leonard F. Register, Elyse Rosenbaum, Kevin Yang · Applied Physics Letters · 1999 · 235 citations

Device Modeling, Semiconductors, Electrical Engineering +14

Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

Sanjay K. Banerjee, Leonard F. Register, Emanuel Tutuc et al. · IEEE Electron Device Letters · 2009 · 215 citations

Engineering, Energy Efficiency, New Type +17

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva et al. · Nano Letters · 2015 · 211 citations · Full text

Mechanism of stress-induced leakage current in MOS capacitors

Elyse Rosenbaum, Leonard F. Register · IEEE Transactions on Electron Devices · 1997 · 200 citations

Electrical Engineering, Engineering, Tunneling Microscopy +12

Graphene field-effect transistors

Dharmendar Reddy, Leonard F. Register, Gary D. Carpenter et al. · Journal of Physics D Applied Physics · 2011 · 169 citations

Materials Science, Semiconductors, Electrical Engineering +15