R. N. Lovyagin

Statistics

Publications

Citations

103

H-Index

Active since

1973

Affiliations

Institute of Semiconductor Physics(Current)

Russian Academy of Sciences

R. N. Lovyagin is an author at Institute of Semiconductor Physics specializing in semiconductor materials, materials engineering, and materials science.

Publications per year

1973–1981

Publications

Heteroepitaxy of germanium thin films on silicon by ion sputtering

R. N. Lovyagin, O. P. Pchelyakov, S. I. Stenin · Journal of Crystal Growth · 1974 · 39 citations

Engineering, Materials Engineering, Materials Science +14

Step motion of the growth surface in the initial stage of semiconductor film epitaxy with ion sputtering

R. N. Lovyagin · Thin Solid Films · 1974 · 25 citations

Engineering, Materials Engineering, Materials Science +17

Silicon homoepitaxy with ion sputtering. I. Mechanism of growth

O. P. Pchelyakov, R. N. Lovyagin, E. A. Krivorotov et al. · physica status solidi (a) · 1973 · 15 citations

Engineering, Materials Engineering, Materials Science +17

p–n junctions in the surface region of silicon obtained by evaporation of silicon in ultrahigh vacuum

R. N. Lovyagin, Alexandr N. Simonov, I. S. Bzinkovskaya · physica status solidi (a) · 1978 · 14 citations

Engineering, Materials Engineering, Materials Science +17

Luminescent analysis of an impurity in the near‐surface layer of thermally evaporated silicon

L. N. Safronov, R. N. Lovyagin · physica status solidi (b) · 1981 · 10 citations

Natural Sciences, Materials Engineering, Materials Science +17

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