M. Beyer

Variation of lateral doping as a field terminator for high-voltage power devices

R. Stengl, U. Gösele, C. Fellinger et al. · IEEE Transactions on Electron Devices · 1986 · 72 citations

Engineering, Field Terminator, High-voltage Planar Junctions +16

Application of Ion Mobility Spectrometry to Semiconductor Technology: Outgassings of Advanced Polymers under Thermal Stress

K. Budde, W. Holzapfel, M. Beyer · Journal of The Electrochemical Society · 1995 · 58 citations

Engineering, Ion Mobility Spectrometry, Polymer Nanocomposites +22

<title>Application aspects of the Si-CARL bilayer process</title>

Michael Sebald, Joerg Berthold, M. Beyer et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1991 · 16 citations

Electrical Engineering, Engineering, Microfabrication +12

A large area MOS-GTO with wafer-repair technique

M. Stoisiek, M. Beyer, W. Kiffe et al. · 1987 · 15 citations

Engineering, Power Electronics, Semiconductor Device +16