John Kuehne - Concepedia

Author

John Kuehne

Texas Instruments (United States)

Also Known As

J. Kuehne, J. W. Kuehne, J.W. Kuehne, John Kuehne, John W. Kuehne, Kuehne, John, Kuehne, John William, 1960-

Publications

627

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)The University of Texas at Austin

About

John Kuehne is an author at Texas Instruments (United States) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	507
2	Applied Physics	9	9	262
3	Chemical Engineering	2	2	44
4	Natural Sciences	1	1	20
5	Chemistry	1	1	19

John Kuehne

Publications

556

Citations

H-Index

Page 1

	Year	Citations
Single-wafer integrated semiconductor device processing Masoud Moslehi, R. A. Chapman, Man Wong, IEEE Transactions on Electron Devices Electrical EngineeringWafer Scale ProcessingEngineeringAdvanced Packaging (Semiconductors)Flexible Electronics	1992	96
Terrestrial water storage and polar motion John Kuehne, Clark R. Wilson Journal of Geophysical Research Atmospheres EngineeringPolar EnvironmentsMultiple CoherenceEarth ScienceGeophysics	1991	65
Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process Amitava Chatterjee, R. A. Chapman, G. Dixit, Poly GateElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	2002	56
Atmospheric excitation of nonseasonal polar motion John Kuehne, Stuart Johnson, Clark R. Wilson Journal of Geophysical Research Atmospheres Upper AtmosphereEngineeringAtmospheric SoundingPolar EnvironmentsEarth Science	1993	48
Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system Whye-Kei Lye, Eiji HASEGAWA, Tso‐Ping Ma, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1997	37
Estimates of the Chandler wobble frequency and <i>Q</i> John Kuehne, Clark R. Wilson, Stuart Johnson Journal of Geophysical Research Atmospheres GeophysicsProxy ExcitationsAtmospheric ConditionEngineeringAtmospheric Science	1996	36
MEASURING THE EVOLUTIONARY RATE OF COOLING OF ZZ Ceti Anjum S. Mukadam, A. Bischoff‐Kim, Oliver J. Fraser, The Astrophysical Journal	2013	36
Ultrathin nitrogen-profile engineered gate dielectric films S. V. Hattangady, R. Kraft, D.T. Grider, Materials ScienceGate Electrode/dielectricElectrical EngineeringSemiconductor TechnologyEngineering	2002	35
Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology Amitava Chatterjee, Inayat Ali, K. Joyner, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Unit ProcessesElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)Sti Flow	1997	27
Thin fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/ G. Q. Lo, W. Ting, Jinho Ahn, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringChemical EngineeringGate DielectricsHigh Temperature Materials	1992	25

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