G. A. Oganesyan

Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

V. V. Emtsev, V. V. Kozlovski, A. А. Lebedev et al. · Semiconductors · 2012 · 40 citations

Radiation-induced defects in n-type GaN and InN

V. V. Emtsev, V. Yu. Davydov, E. E. Häller et al. · Physica B Condensed Matter · 2001 · 31 citations

Physics, Applied Physics, Gan Power Device +2

Radiation Defects in Heterostructures 3C-SiC/4H-SiC

A. А. Lebedev, G. A. Oganesyan, V. V. Kozlovski et al. · Crystals · 2019 · 22 citations · Full text

Semiconductor Technology, Electrical Engineering, Epitaxial Growth +10

Highly doped p-type 3C–SiC on 6H–SiC substrates

A. А. Lebedev, P. L. Abramov, E. V. Bogdanova et al. · Semiconductor Science and Technology · 2008 · 20 citations

Materials Engineering, Semiconductors, Materials Science +14

Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation

Vitalii V. Kozlovski, V. V. Emtsev, A. A. Lebedev et al. · Physica B Condensed Matter · 2009 · 19 citations

Electrical Engineering, Engineering, N-type Silicon +5