G. A. Oganesyan - Concepedia

Author

G. A. Oganesyan

Peter the Great St. Petersburg Polytechnic University ORCID

Also Known As

A. Misiuk, D.S. Poloskin, Emtsev, V. V., G A Oganesyan, G Oganesyan, G. A. Oganesyan, G. Oganesyan, G.A. Oganesyan, Gagik A. Oganesyan, Gagik Oganesyan

144

Publications

610

Citations

H-Index

Concepts

All Affiliations

Peter the Great St. Petersburg Polytechnic University Russian Academy of Sciences Physico-Technical Institute Ioffe Institute National and Kapodistrian University of Athens

About

G. A. Oganesyan is an author at Peter the Great St. Petersburg Polytechnic University specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	12	12	205
2	Engineering	11	11	176
3	Natural Sciences	2	2	27
4	Medicine	1	1	13
5	Social Sciences	1	1	13

G. A. Oganesyan

Publications

338

Citations

H-Index

Page 1

	Year	Citations
Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type V. V. Emtsev, V. V. Kozlovski, A. А. Lebedev, Semiconductors	2012	40
Radiation-induced defects in n-type GaN and InN V. V. Emtsev, V. Yu. Davydov, E. E. Häller, Physica B Condensed Matter PhysicsApplied PhysicsGan Power DeviceRadiation-induced DefectsCategoryiii-v Semiconductor	2001	31
Radiation Defects in Heterostructures 3C-SiC/4H-SiC A. А. Lebedev, G. A. Oganesyan, V. V. Kozlovski, Crystals Semiconductor TechnologyElectrical EngineeringEpitaxial GrowthEngineeringMev Proton Irradiation	2019	22
Highly doped p-type 3C–SiC on 6H–SiC substrates A. А. Lebedev, P. L. Abramov, E. V. Bogdanova, Semiconductor Science and Technology Materials EngineeringSemiconductorsMaterials ScienceSublimation EpitaxyP-3c–sic Layers	2008	20
Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation Vitalii V. Kozlovski, V. V. Emtsev, A. A. Lebedev, Physica B Condensed Matter Electrical EngineeringEngineeringN-type SiliconApplied PhysicsSemiconductor Device Fabrication	2009	19
Positron annihilation on defects in silicon irradiated with 15 MeV protons N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg, Journal of Physics Condensed Matter	2012	18
Formation and annealing of vacancy-P complexes in proton-irradiated germanium Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg, Acta Materialia Inorganic ChemistryVacancy-p ComplexesEngineeringNatural SciencesApplied Physics	2015	16
The effect of germanium doping on the evolution of defects in silicon C. A. Londos, A. Andrianakis, V. V. Emtsev, Materials Science and Engineering B EngineeringPhysicsApplied PhysicsDefect FormationSemiconductor Material	2008	16
Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing A. I. Patuk, I. A. Shakin, T. P. Larionova, Physica B Condensed Matter PhotoluminescenceEngineeringLow-temperature Photoluminescence CharacterizationPhysicsApplied Physics	2001	16
Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4H modification V. V. Emtsev, K. V. Emtsev, N. B. Strokan, Semiconductors	2008	15

Page 1