E. V. Bogdanova

Irradiation of 4H-SiC UV detectors with heavy ions

E. V. Kalinina, A. A. Lebedev, E. V. Bogdanova et al. · Semiconductors · 2015 · 22 citations

Engineering, Materials Engineering, Materials Science +14

Highly doped p-type 3C–SiC on 6H–SiC substrates

A. А. Lebedev, P. L. Abramov, E. V. Bogdanova et al. · Semiconductor Science and Technology · 2008 · 20 citations

Engineering, Materials Engineering, Materials Science +17

A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum

A. А. Lebedev, V. V. Zelenin, P. L. Abramov et al. · Semiconductors · 2007 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +15

Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons

V. V. Kozlovski, A. А. Lebedev, V. N. Lomasov et al. · Semiconductors · 2014 · 12 citations

Natural Sciences, Materials Engineering, Materials Science +14

Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD)

V. V. Kozlovski, A. A. Lebedev, E. V. Bogdanova et al. · Semiconductors · 2015 · 12 citations

Engineering, Materials Engineering, Materials Science +14