Tsung-Han Yang

Semiconductor-metal transition characteristics of VO2 thin films grown on c- and r-sapphire substrates

Tsung-Han Yang, Ravi Aggarwal, Alok Gupta et al. · Journal of Applied Physics · 2010 · 148 citations

Natural Sciences, Materials Science, Physics +17

Demonstration of mechanically exfoliated <i>β</i>-Ga2O3/GaN p-n heterojunction

Jossue Montes, Chen Yang, Houqiang Fu et al. · Applied Physics Letters · 2019 · 85 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Kai Fu, Houqiang Fu, Xuanqi Huang et al. · IEEE Journal of the Electron Devices Society · 2020 · 81 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Role of interfacial transition layers in VO2/Al2O3 heterostructures

Hao Zhou, Matthew F. Chisholm, Tsung-Han Yang et al. · Journal of Applied Physics · 2011 · 77 citations

Engineering, Materials Engineering, Materials Science +17

Volatile release and particle formation characteristics of injected pulverized coal in blast furnaces

Wei‐Hsin Chen, Shan-Wen Du, Tsung-Han Yang · Energy Conversion and Management · 2007 · 77 citations

Engineering, Industrial Engineering, Mining Engineering +14