Jingtian Fang

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Rong Jiang, Xiao Shen, Jingtian Fang et al. · IEEE Transactions on Device and Materials Reliability · 2018 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Microscopic dielectric permittivities of graphene nanoribbons and graphene

Jingtian Fang, William G. Vandenberghe, Massimo V. Fischetti · Physical review. B./Physical review. B · 2016 · 62 citations

Natural Sciences, Materials Science, Physics +17

Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations

Jingtian Fang, Mahmud Reaz, Stephanie L. Weeden-Wright et al. · IEEE Transactions on Nuclear Science · 2018 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +17

Theoretical Study of Ballistic Transport in Silicon Nanowire and Graphene Nanoribbon Field-Effect Transistors Using Empirical Pseudopotentials

Jingtian Fang, Shanmeng Chen, William G. Vandenberghe et al. · IEEE Transactions on Electron Devices · 2017 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors

Jingtian Fang, William G. Vandenberghe, Bo Fu et al. · Journal of Applied Physics · 2016 · 22 citations

Engineering, Electrical Engineering, Materials Science +17