Harold Hearne

A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit

Victor Veliadis, Megan Snook, Ty McNutt et al. · IEEE Electron Device Letters · 2008 · 43 citations

Semiconductor Technology, Electrical Engineering, Engineering +15

A 1680-V (at 1 $\hbox{mA/cm}^{2}$) 54-A (at 780 $\hbox{W/cm}^{2}$) Normally ON 4H-SiC JFET With 0.143- $\hbox{cm}^{2}$ Active Area

Victor Veliadis, Ty McNutt, Megan Snook et al. · IEEE Electron Device Letters · 2008 · 40 citations

Semiconductor Technology, Transistor Current Gain, Electrical Engineering +11

Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

Victor Veliadis, Harold Hearne, Eric J. Stewart et al. · IEEE Electron Device Letters · 2012 · 28 citations

Engineering, Bpd-induced Sf-related Degradation, Power Electronics +17

A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation

Victor Veliadis, Eric J. Stewart, Harold Hearne et al. · IEEE Electron Device Letters · 2010 · 28 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Victor Veliadis, Damian Urciuoli, Harold Hearne et al. · Materials science forum · 2010 · 23 citations

Power Engineering, Engineering, Power Circuit +17