Concepedia

J.F. DeGelormo

JD

6

Publications

118

Citations

6

H-Index

1985

Active since

Affiliations

IBM (United States)(Current)

IBM Research - Thomas J. Watson Research Center

J.F. DeGelormo is an author at IBM (United States) specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsMicroelectronicsElectrical EngineeringMaterial ScienceIntegrated CircuitsQuantum EngineeringThin FilmsSemiconductorsThermodynamics

Publications per year

1985–2002

6

Publications

6

Gate-self-aligned n-channel and p-channel germanium MOSFETs

C. Ransom, Thomas N. Jackson, J.F. DeGelormo · IEEE Transactions on Electron Devices · 1991 · 28 citations

Electrical Engineering, Ion Implantation, Engineering +10

Gate-self-aligned p-channel germanium MISFETs

Thomas N. Jackson, C. Ransom, J.F. DeGelormo · IEEE Electron Device Letters · 1991 · 27 citations

Semiconductor Technology, Electrical Engineering, Germanium Fets +12

Capacitance–voltage characterization of silicide–GaAs Schottky contacts

Thomas N. Jackson, J.F. DeGelormo · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 26 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Shallow n+ Junctions in Silicon by Arsenic Gas‐Phase Doping

C. Ransom, Thomas N. Jackson, J.F. DeGelormo et al. · Journal of The Electrochemical Society · 1994 · 16 citations

Materials Science, Semiconductor Technology, Shallow Junctions +9

Arsine Ambient Rapid Thermal Annealing

Thomas N. Jackson, J.F. DeGelormo, G. T. Pepper · MRS Proceedings · 1988 · 11 citations

Materials Science, Ion Implantation, Engineering +4

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