Charles H. Wallace

A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 μm/sup 2/ SRAM cell

Scott E. Thompson, N. Anand, M Armstrong et al. · 2003 · 241 citations

Nm Logic Technology, Engineering, Vlsi Design +19

45nm High-k + metal gate strain-enhanced transistors

C. Auth, A. Cappellani, Jang‐Soo Chun et al. · 2008 · 204 citations

Materials Engineering, Electrical Engineering, Engineering +11

Rapid Solid-State Synthesis of Tantalum, Chromium, and Molybdenum Nitrides

Jennifer L. O'Loughlin, Charles H. Wallace, Meredith S. Knox et al. · Inorganic Chemistry · 2001 · 51 citations

Materials Science, Inorganic Chemistry, Crystalline Cubic Crn +9

Thermal Control of Metathesis Reactions Producing GaN and InN

Robert W. Cumberland, Richard G. Blair, Charles H. Wallace et al. · The Journal of Physical Chemistry B · 2001 · 41 citations

Materials Science, Engineering, Aluminum Gallium Nitride +12

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

Charles H. Wallace, Sang-Ho Kim, Garry A. Rose et al. · Applied Physics Letters · 1998 · 39 citations · Full text

Engineering, Crystal Growth Technology, Luminescent Glass +18