Fu‐Yuan Jin

Improving Performance by Doping Gadolinium Into the Indium-Tin–Oxide Electrode in HfO₂-Based Resistive Random Access Memory

Po‐Hsun Chen, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2016 · 30 citations

Engineering, Materials Engineering, Materials Science +17

Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

Kuan-Hsu Chen, Chien-Yu Lin, Min-Chen Chen et al. · IEEE Transactions on Electron Devices · 2020 · 19 citations

Engineering, Materials Engineering, Materials Science +15

Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes

Fong‐Min Ciou, Jia-Hong Lin, Po‐Hsun Chen et al. · IEEE Electron Device Letters · 2021 · 16 citations

Engineering, Electrical Engineering, Microelectronics +15

Effects of erbium doping of indium tin oxide electrode in resistive random access memory

Po‐Hsun Chen, Kuan‐Chang Chang, Ting‐Chang Chang et al. · Applied Physics Express · 2016 · 12 citations

Engineering, Materials Engineering, Materials Science +17

Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection

Yu‐Lin Tsai, Ting‐Chang Chang, Yu‐Ching Tsao et al. · IEEE Transactions on Device and Materials Reliability · 2021 · 12 citations

Engineering, Electrical Engineering, Materials Science +17