Y. Matsunaga

A 3.6 V 4 W 0.2cc Si power-MOS-amplifier module for GSM handset phones

S. Yoshida, M. Katsueda, M. Morikawa et al. · 2002 · 21 citations

Engineering, Electrical Engineering, Microelectronics +16

Defect engineering of p+-junctions by multiple-species ion implantation

Michael Current, M. Inoue, S. Nakashima et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1993 · 20 citations

Engineering, Materials Engineering, Materials Science +10

A sub-0.1 μm circuit design with substrate-over-biasing [CMOS logic]

Y. Oowaki, Munetaka Noguchi, Shinichi Takagi et al. · 2002 · 17 citations

Engineering, Computer Engineering, Electrical Engineering +17

High performance scaled down Si LDMOSFET with thin gate bird's beak technology for RF power amplifiers

Yutaka Hoshino, M. Morikawa, S. Kamohara et al. · 2003 · 13 citations

Engineering, Electrical Engineering, Electronic Materials +16

Diffusion of ion-implanted boron impurities into pre-amorphized silicon

Naotsugu Ohno, Tohru Hara, Y. Matsunaga et al. · Materials Science in Semiconductor Processing · 2000 · 10 citations

Engineering, Materials Engineering, Materials Science +14