Concepedia

Pedro C. Feijoo

PC

Statistics

Publications

12

Citations

180

H-Index

11

Active since

2010

Affiliations

Universidad Complutense de Madrid(Current)

Universitat Autònoma de Barcelona

Aalto University

Pedro C. Feijoo is an author at Universidad Complutense de Madrid specializing in materials science, electronic materials, and semiconductor devices.

ORCID

Publications per year

2010–2022

12

Publications

12

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

Pedro C. Feijoo, Francisco Pasadas, José M Iglesias et al. · Nanotechnology · 2017 · 21 citations · Full text

, , +17

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Pedro C. Feijoo, A. del Prado, M. Toledano-Luque et al. · Journal of Applied Physics · 2010 · 19 citations · Full text

, , +17

An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors

Aníbal Pacheco-Sánchez, Nikolaos Mavredakis, Pedro C. Feijoo et al. · IEEE Transactions on Electron Devices · 2022 · 18 citations · Full text

, , +17

Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

Pedro C. Feijoo, T. Kauerauf, M. Toledano-Luque et al. · IEEE Transactions on Device and Materials Reliability · 2012 · 17 citations · Full text

, , +17

Does carrier velocity saturation help to enhance <i>f</i><sub>max</sub> in graphene field-effect transistors?

Pedro C. Feijoo, Francisco Pasadas, Marlene Bonmann et al. · Nanoscale Advances · 2020 · 17 citations · Full text

, , +17

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