Brendan Sheehan

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System

Paul K. Hurley, Éamon O’Connor, Vladimir Djara et al. · IEEE Transactions on Device and Materials Reliability · 2013 · 49 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Back-gated Nb-doped MoS2 junctionless field-effect-transistors

Gioele Mirabelli, Michael Schmidt, Brendan Sheehan et al. · AIP Advances · 2016 · 26 citations · Full text

Natural Sciences, Materials Science, Physics +17

Large-area growth of MoS₂ at temperatures compatible with integrating back-end-of-line functionality

Jun Lin, Scott Monaghan, Neha Sakhuja et al. · 2D Materials · 2020 · 23 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +17

Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

Jun Lin, Scott Monaghan, K. Cherkaoui et al. · Microelectronic Engineering · 2017 · 22 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

Ray Duffy, Alessio Ricchio, R.A. Murphy et al. · Journal of Applied Physics · 2018 · 19 citations · Full text

Engineering, Electrical Engineering, Materials Science +17