V. D. Prochukhan - Concepedia

Author

V. D. Prochukhan

Physico-Technical Institute

Also Known As

V D Prochukhan, V. D. PROCHUKHAN, V. D. Prochukhan, V.D. Prochukhan, Vitalii D. Prochukhan

Publications

497

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Russian Academy of Sciences Lithuanian Academy of Sciences National Research Tomsk State University Institute of Semiconductor Physics

About

V. D. Prochukhan is an author at Physico-Technical Institute specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	215
2	Applied Physics	10	10	215
3	Natural Sciences	3	3	88
4	Chemistry	2	2	66
5	Electrical Engineering	2	2	54

V. D. Prochukhan

Publications

229

Citations

H-Index

Page 1

	Year	Citations
The Lowest Conduction Band Minima of A<sup>2</sup>B<sup>4</sup>C‐Type Semiconductors R.A. Bendorius, V. D. Prochukhan, A. Šileika physica status solidi (b) Znsip 2EngineeringSemiconductor PhysicsSemiconductor MaterialsChemistry	1972	56
The electrical and optical properties of 2.0 MeV electron-irradiated ZnGeP2 V. N. Brudnyı̆, D. L. Budnitskii, M. A. Krivov, physica status solidi (a) Optical MaterialsEngineeringSemiconductorsIi-vi SemiconductorElectron Spectroscopy	1978	41
Photoluminescence of p-type ZnGeP2 crystals G. K. Averkieva, V. S. Grigoreva, Inna Maltseva, physica status solidi (a) Materials ScienceIi-vi SemiconductorZngep2 CrystalsCharge CompositionEngineering	1977	22
Novel zero-gap compounds, magnetics: CuFeS<sub>2</sub>and CuFeTe<sub>2</sub> L. V. Kradinova, A. M. Polubotko, V. D. Prochukhan, Semiconductor Science and Technology Magnetic PropertiesEngineeringLow-dimensional MagnetismNovel Zero-gap CompoundsMagnetic Materials	1993	22
Pressure dependence of the absorption edge of Cd1−xMnxTe G. Ambrazevičius, G.-J. Babonas, S. Marcinkevičius, Solid State Communications Pressure DependenceEngineeringApplied PhysicsCondensed Matter PhysicsInterfacial Study	1984	17
Thermoreflectance spectra and energy band structure of ZnGeP<sub>2</sub> crystals A. Raudonis, V. S. Grigoreva, V. D. Prochukhan, physica status solidi (b)	1973	14
Change of electrical properties in electron irradiated CdGeAs2 crystals V. N. Brudnyı̆, M. A. Krivov, I. K. Polushina, physica status solidi (a) Electrical EngineeringCdgeas2 CrystalsEngineeringPhysicsElectron Spectroscopy	1978	13
Some electrical properties of high-resistance ZnGeP2 single crystals V. S. Grigoreva, V. D. Prochukhan, Yu. V. Rud, physica status solidi (a) Materials ScienceEngineeringCrystal MaterialApplied PhysicsElectrical Properties	1973	12
Investigation of the gapless state in CuFeTe<sub>2</sub> A. A. Vaĭpolin, S A Kijaev, L. V. Kradinova, Journal of Physics Condensed Matter Materials ScienceSpintronicsTransition Metal ChalcogenidesEngineeringPhysics	1992	12
Gapless State in CuFeS<sub>2</sub> A. P. Mikhailovskii, A. M. Polubotko, V. D. Prochukhan, physica status solidi (b) SemiconductorsMagnetismSpintronicsMaterials ScienceEngineering	1990	10

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