Photoluminescence of p-type ZnGeP2 crystals

Abstract

Results are presented on the photoluminescence (PL) spectra of ZnGeP2 crystals. The crystals have been grown by different methods, with charge composition varying from the stoichiometric one as well as with different dopants introducing. At 77 K radiative recombination is determined by deep centres while the spectra have the appearance of wide, structureless bands. Based upon an analyses of the influence of the charge composition on the PL spectra structure an assumption is made of the nature of radiative transitions with maxima at ≈ 1.6 and 1.3 eV. The most short-wavelength radiation with maximum at ≈ 1.745 eV is observed in the Cd- and Si-doped crystals. Russian text ignored