A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein, +33

IEEE Journal of Solid-State Circuits

Non-volatile MemoryEngineeringVlsi DesignEmerging Memory TechnologyComputer Architecture +15

A 130.7mm<sup>2</sup> 2-layer 32Gb ReRAM memory device in 24nm technology

Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein, +44

Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringReram Test Chip +11

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

Raul-Adrian Cernea, Long Pham, Farookh Moogat, +40

IEEE Journal of Solid-State Circuits

A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, +32

IEEE Journal of Solid-State Circuits

Non-volatile MemoryEngineeringVlsi DesignEmerging Memory TechnologyComputer Architecture +14

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS

Cuong Trinh, Noboru Shibata, Takumi Nakano, +52

Non-volatile MemoryEngineeringTechnology ScalingFlash MemoryComputer Engineering +11

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong, +45

IEEE Journal of Solid-State Circuits

Nm TechnologyElectrical EngineeringNon-volatile MemoryEngineering4-Level Nand Flash +10

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li, Seungpil Lee, Ken Oowada, +53

Non-volatile MemoryElectrical EngineeringToggle ModeEngineeringNeighbor Interference +13

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate

Yan Li, Seungpil Lee, Yupin Fong, +45

D2 ChipsElectrical EngineeringNon-volatile MemoryEngineeringGb D3 Chip +11

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Ken Takeuchi, Y. Kameda, Shinji Fujimura, +32

Non-volatile MemoryElectrical EngineeringEfficient UseEngineeringNoise-cancellation Circuits +13

A 146-<tex>$hbox mm^2$</tex>8-Gb Multi-Level NAND Flash Memory With 70-nm CMOS Technology

T. Hara, Koichi Fukuda, K. Kanazawa, +21

IEEE Journal of Solid-State Circuits

Non-volatile MemoryElectrical EngineeringChip SizeEngineering70-Nm Cmos Technology +10