M. Higashitani

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein et al. · IEEE Journal of Solid-State Circuits · 2013 · 175 citations

Non-volatile Memory, Engineering, Vlsi Design +17

A 130.7mm<sup>2</sup> 2-layer 32Gb ReRAM memory device in 24nm technology

Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein et al. · 2013 · 116 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +13

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

Raul-Adrian Cernea, Long Pham, Farookh Moogat et al. · IEEE Journal of Solid-State Circuits · 2009 · 75 citations

A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura et al. · IEEE Journal of Solid-State Circuits · 2007 · 70 citations

Non-volatile Memory, Engineering, Vlsi Design +16

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS

Cuong Trinh, Noboru Shibata, Takumi Nakano et al. · 2009 · 69 citations

Non-volatile Memory, Engineering, Technology Scaling +13