F. Redmann

Humidity‐induced plasticization and antiplasticization of polyamide 6: A positron lifetime study of the local free volume

G. Dlubek, F. Redmann, R. Krause‐Rehberg · Journal of Applied Polymer Science · 2002 · 111 citations

Engineering, Chemistry, Polymers +20

Vacancies and deep levels in electron-irradiated 6<i>H</i> SiC epilayers studied by positron annihilation and deep level transient spectroscopy

A. Kawasuso, F. Redmann, R. Krause‐Rehberg et al. · Journal of Applied Physics · 2001 · 46 citations

Semiconductors, Semiconductor Technology, Positron Annihilation +13

Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy

A. Kawasuso, F. Redmann, R. Krause‐Rehberg et al. · Applied Physics Letters · 2001 · 45 citations

Engineering, Positron Annihilation Spectroscopy, Z1/2 Levels +17

Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation

J. Gebauer, M. Lausmann, F. Redmann et al. · Physical review. B, Condensed matter · 2003 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Positron Annihilation +14

Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp /2

R. Krause‐Rehberg, F. Börner, F. Redmann · Applied Physics Letters · 2000 · 25 citations

Materials Engineering, Materials Science, Defect Tolerance +15