Baijun Zhang

Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

Yibin Yang, Peng Xiang, Minggang Liu et al. · Journal of Crystal Growth · 2013 · 49 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa et al. · Japanese Journal of Applied Physics · 2003 · 47 citations

Engineering, Aln/gan Multilayers, Optoelectronic Devices +16

Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

Liuan Li, Wenjing Wang, Liang He et al. · Materials Science in Semiconductor Processing · 2017 · 40 citations

Materials Engineering, Materials Science, Electrical Engineering +7

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

Yao Yao, Zhiyuan He, Fan Yang et al. · Applied Physics Express · 2013 · 38 citations

Al2o3/gan Interface, Recessed Gate, Electrical Engineering +9

GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid

Weijie Chen, Jiali Lin, Guoheng Hu et al. · Journal of Crystal Growth · 2015 · 38 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10