G.-T. Chen

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

B. S. Kang, S. Kim, J. Kim et al. · Applied Physics Letters · 2003 · 112 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN HEMT based liquid sensors

R. Mehandru, B. Luo, B. S. Kang et al. · Solid-State Electronics · 2003 · 74 citations

Engineering, Materials Engineering, Materials Science +10

Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

Yoshihiro Irokawa, B. Luo, Jihyun Kim et al. · Applied Physics Letters · 2003 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates

B. S. Kang, F. Ren, Yoshihiro Irokawa et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

Efficient spin relaxation in InGaN∕GaN and InGaN∕GaMnN quantum wells: An obstacle to spin detection

Weimin Chen, I. A. Buyanova, K. Nishibayashi et al. · Applied Physics Letters · 2005 · 21 citations

Natural Sciences, Physics, Condensed Matter Physics +16