Young Gwang Yoon

First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation

Tae Kyun Kim, Dong Hyun Kim, Young Gwang Yoon et al. · IEEE Electron Device Letters · 2013 · 83 citations

Device Modeling, Electrical Engineering, Engineering +10

Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-$\kappa $ Gate Spacers

Ji Hun Choi, Tae Kyun Kim, Jung Min Moon et al. · IEEE Electron Device Letters · 2014 · 51 citations

High-κ Gate Spacer, Electrical Engineering, Device Performance Enhancement +8

Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate

Woo Jin Jeong, Tae Kyun Kim, Jung Min Moon et al. · Semiconductor Science and Technology · 2015 · 13 citations

Engineering, Field-effect Transistors, Fin-type Ehb-tfets Show +16

High rate dry etching of InGaZnO by BCl3/O2 plasma

Wanjae Park, Ki‐Woong Whang, Young Gwang Yoon et al. · Applied Physics Letters · 2011 · 12 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment

Young Gwang Yoon, Tae Kyun Kim, Inchan Hwang et al. · ACS Applied Materials & Interfaces · 2014 · 11 citations

Engineering, Ar Plasma Treatment, Plasma Processing +17