Jung Min Moon

First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation

Tae Kyun Kim, Dong Hyun Kim, Young Gwang Yoon et al. · IEEE Electron Device Letters · 2013 · 83 citations

Device Modeling, Electrical Engineering, Engineering +10

Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-$\kappa $ Gate Spacers

Ji Hun Choi, Tae Kyun Kim, Jung Min Moon et al. · IEEE Electron Device Letters · 2014 · 51 citations

High-κ Gate Spacer, Electrical Engineering, Device Performance Enhancement +8

Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Choong‐Ki Kim, Hyun Jun Ahn, Jung Min Moon et al. · Solid-State Electronics · 2015 · 16 citations

Materials Science, Materials Engineering, Electrical Engineering +11

Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate

Woo Jin Jeong, Tae Kyun Kim, Jung Min Moon et al. · Semiconductor Science and Technology · 2015 · 13 citations

Engineering, Field-effect Transistors, Fin-type Ehb-tfets Show +16