Eric Joubert

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt et al. · IEEE Transactions on Power Electronics · 2018 · 45 citations

Engineering, Electrical Engineering, Microelectronics +13

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

Wadia Jouha, Mohamed Masmoudi, Ahmed El Oualkadi et al. · IEEE Transactions on Device and Materials Reliability · 2020 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress

Niemat Moultif, Olivier Latry, Eric Joubert et al. · IEEE Transactions on Power Electronics · 2020 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

Niemat Moultif, Olivier Latry, Mamadou Ndiaye et al. · Microelectronics Reliability · 2019 · 16 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +14

Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

Niemat Moultif, Andrés Echeverri, Dominique Carisetti et al. · IEEE Transactions on Device and Materials Reliability · 2019 · 12 citations

Engineering, Electrical Engineering, Materials Science +17