Panagiotis Bousoulas

Low-Power and Highly Uniform 3-b Multilevel Switching in Forming Free TiO_{2–<italic>x</italic>}-Based RRAM With Embedded Pt Nanocrystals

Panagiotis Bousoulas, Spyros Stathopoulos, D. Tsialoukis et al. · IEEE Electron Device Letters · 2016 · 78 citations

Materials Science, Electrical Engineering, Multilevel Capability +14

Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties

Panagiotis Bousoulas, P. Asenov, I. Karageorgiou et al. · Journal of Applied Physics · 2016 · 56 citations

Engineering, Emerging Memory Technology, Titanium Oxide +23

Low-Power Forming Free TiO_{2–<italic>x</italic>}/HfO_{2–<italic>y</italic>}/TiO_{2–<italic>x</italic>}-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics

Panagiotis Bousoulas, Irini Michelakaki, Evangelos Skotadis et al. · IEEE Transactions on Electron Devices · 2017 · 56 citations

Materials Science, Materials Engineering, Engineering +15

Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO ₂ -based conductive bridge memristors

Panagiotis Bousoulas, Dionisis Sakellaropoulos, Charalampos Papakonstantinopoulos et al. · Nanotechnology · 2020 · 56 citations

Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2−x-based memory devices through experiments and simulations

Panagiotis Bousoulas, Iason Giannopoulos, P. Asenov et al. · Journal of Applied Physics · 2017 · 50 citations

Materials Engineering, Materials Science, Electrical Engineering +15