Irini Michelakaki

Low-Power Forming Free TiO_{2–<italic>x</italic>}/HfO_{2–<italic>y</italic>}/TiO_{2–<italic>x</italic>}-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics

Panagiotis Bousoulas, Irini Michelakaki, Evangelos Skotadis et al. · IEEE Transactions on Electron Devices · 2017 · 56 citations

Materials Science, Materials Engineering, Engineering +15

Influence of oxygen content of room temperature TiO_2−x deposited films for enhanced resistive switching memory performance

Panagiotis Bousoulas, Irini Michelakaki, D. Tsoukalas · Journal of Applied Physics · 2014 · 49 citations

Non-volatile Memory, J. Appl, Engineering +17

Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO 2−x thin films

Panagiotis Bousoulas, Irini Michelakaki, D. Tsoukalas · Thin Solid Films · 2014 · 37 citations

Materials Science, Materials Engineering, Engineering +6

Neutron spectrum unfolding for the development of a novel neutron detector for fusion

C.R. Nobs, L.W. Packer, P. Batistoni et al. · Fusion Engineering and Design · 2019 · 19 citations

Engineering, Nuclear Physics, Physics +9

Coexistence of bipolar and threshold resistive switching in TiO₂based structure with embedded hafnium nanoparticles

Irini Michelakaki, Panagiotis Bousoulas, Spyros Stathopoulos et al. · Journal of Physics D Applied Physics · 2016 · 13 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +23