R. Pritchard

Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

M.A. Gibbon, J. P. Stagg, C.G. Cureton et al. · Semiconductor Science and Technology · 1993 · 152 citations

Engineering, Planar Inp Substrates, Electron Microscopy +17

Interactions of hydrogen molecules with bond-centered interstitial oxygen and another defect center in silicon

R. Pritchard, M. J. Ashwin, James H. R. Tucker et al. · Physical review. B, Condensed matter · 1997 · 152 citations

Isolated interstitial hydrogen molecules in hydrogenated crystalline silicon

R. Pritchard, M. J. Ashwin, James H. R. Tucker et al. · Physical review. B, Condensed matter · 1998 · 120 citations

Engineering, Solid-state Nmr Spectroscopy, Physics +13

Hydrogen molecules in boron-doped crystalline silicon

R. Pritchard, James H. R. Tucker, R.C. Newman et al. · Semiconductor Science and Technology · 1999 · 58 citations

Engineering, Chemistry, Hidden Hydrogen +17

Native defects in low-temperature GaAs and the effect of hydrogenation

R. Pritchard, S.A. McQuaid, L. Hart et al. · Journal of Applied Physics · 1995 · 29 citations

Semiconductors, Wide-bandgap Semiconductor, Semiconductor Technology +14