Hongchang Tao

Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping

Hongchang Tao, Shengrui Xu, Jincheng Zhang et al. · IEEE Transactions on Electron Devices · 2018 · 46 citations

Ga-polar Uv-leds Counterpart, Engineering, Optoelectronic Devices +17

Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation

Hongchang Tao, Shengrui Xu, Jincheng Zhang et al. · Optics Express · 2023 · 35 citations · Full text

Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes

Huake Su, Shengrui Xu, Hongchang Tao et al. · IEEE Electron Device Letters · 2021 · 25 citations

Wide-bandgap Semiconductor, Fe Doping, Electrical Engineering +14

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

Huake Su, Tao Zhang, Shengrui Xu et al. · Applied Physics Letters · 2022 · 20 citations

Materials Science, Patterned Sapphire Substrate, Electrical Engineering +9

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high <i>ION</i>/<i>IOFF</i> ratio and steep subthreshold swing

Huake Su, Tao Zhang, Shengrui Xu et al. · Applied Physics Letters · 2024 · 19 citations