J. H. Lee

Self-heating effect in FinFETs and its impact on devices reliability characterization

S. E. Liu, J. S. Wang, Ying-Ta Lu et al. · 2014 · 114 citations

Engineering, Electrical Engineering, Electronic Materials +15

Physical origins of plasma damage and its process/gate area effects on high-k metal gate technology

P. J. Liao, S. Liang, Huitzu Lin et al. · 2013 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors

Dongsheng Huang, J. H. Lee, Y. S. Tsai et al. · 2018 · 17 citations

Engineering, Computer Engineering, Electrical Engineering +17

The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs

I. K. Chen, S. C. Chen, Subhadeep Mukhopadhyay et al. · 2018 · 17 citations

Engineering, Electrical Engineering, Electronic Materials +16

AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology

P. S. Chen, Y. W. Lee, Dongsheng Huang et al. · 2022 IEEE International Reliability Physics Symposium (IRPS) · 2022 · 15 citations

Engineering, Electrical Engineering, Materials Science +14