Sung‐Ho Hahm

A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

Heon-Bok Lee, Hyun-Ick Cho, Hyun-Su An et al. · IEEE Electron Device Letters · 2006 · 51 citations

Wide-bandgap Semiconductor, Gate Contact, Electrical Engineering +13

Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film

Kwan-Woo Do, Chungmo Yang, Ik-Su Kang et al. · Japanese Journal of Applied Physics · 2006 · 50 citations

High Temperature Stability, Engineering, Uniform Low-resistivity Nickel +16

Fabrication of a lateral field emission triode with a high current density and high transconductance using the local oxidation of the polysilicon layer

Soon-Soo Park, Dong Il Park, Sung‐Ho Hahm et al. · IEEE Transactions on Electron Devices · 1999 · 41 citations

Materials Science, Polysilicon Layer, Electrical Engineering +15

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Chang‐Ju Lee, Chul‐Ho Won, Jung‐Hee Lee et al. · Sensors · 2017 · 25 citations · Full text

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Jong-Ki An, Nak-Kwan Chung, Jin‐Tae Kim et al. · Materials · 2018 · 24 citations · Full text