D. P. Ettisserry

NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads

Nirmal Ramaswamy, Alessandro Calderoni, J. Zahurak et al. · 2023 · 91 citations

Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces

D. P. Ettisserry, Neil Goldsman, Akin Akturk et al. · Journal of Applied Physics · 2014 · 28 citations

Single Carbon Interstitial, Engineering, Silicon On Insulator +16

The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface

S. Salemi, Neil Goldsman, D. P. Ettisserry et al. · Journal of Applied Physics · 2013 · 23 citations

Electrical Engineering, Engineering, Nitrogen Passivation +12

Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

D. P. Ettisserry, Neil Goldsman, Akin Akturk et al. · Journal of Applied Physics · 2015 · 16 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs

D. P. Ettisserry, Neil Goldsman, Aivars J. Lelis · IEEE Transactions on Electron Devices · 2017 · 14 citations

Engineering, Oxygen Vacancies, Strong Negative Bias +17