Takamasa Kawanago

Interface and electrical properties of La-silicate for direct contact of high-k with silicon

Kuniyuki Kakushima, K. Tachi, Masataka Adachi et al. · Solid-State Electronics · 2010 · 50 citations

Engineering, Materials Engineering, Materials Science +14

Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

Kuniyuki Kakushima, Koji Okamoto, K. Tachi et al. · Journal of Applied Physics · 2008 · 42 citations

Engineering, Materials Engineering, Materials Science +17

Bilayer gate dielectric study by scanning tunneling microscopy

Y. C. Ong, D. S. Ang, K. L. Pey et al. · Applied Physics Letters · 2007 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

Takamasa Kawanago, Yeonghun Lee, Kuniyuki Kakushima et al. · IEEE Transactions on Electron Devices · 2011 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

Takamasa Kawanago, Shunri Oda · Applied Physics Letters · 2016 · 32 citations

Engineering, Materials Engineering, Materials Science +17