We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record

${f}_{\mathrm {MAX}} =1.2$

THz, a simultaneous

${f}_{\mathrm {T}} =475$

GHz, and

$BV_{\mathrm {CEO}} =5.4$

V. The resulting

$BV_{\mathrm {CEO}}\,\times \,{f}_{\mathrm {MAX}} =6.48$

THz-V is unparalleled in semiconductor technology. Devices were realized with a 20-nm-thick compositionally and impurity graded GaAsSb-base and a 125-nm InP collector. The performance arises because the process allows: 1) a tunable base–emitter access distance down to 10 nm; 2) the use of thicker base contact metals; and 3) the minimization of parasitic capacitances and resistances via precise lateral wet etching of the base–collector (B/C) mesa. Perhaps more significantly, InP/GaAsSb DHBTs with

${f}_{\mathrm {MAX}} \ge1$

THz are demonstrated with emitter lengths as long as 9.4

$\mu \text{m}$

and areas as high as 1.645

$\mu \text{m}$

² . Such an area is >

$6\times $

larger than previously reported terahertz (THz) DHBTs, representing a breakthrough in THz transistor scalability. This attractive performance level is achieved with a very low dissipated power density which makes InP/GaAsSb DHBTs well-suited for high-efficiency millimeter- and submillimeter-wave applications. Furthermore, we provide the first large-signal characterization of a THz transistor with 94 GHz load-pull measurements showing a peak power-added-efficiency (PAE) of 32.5% (40% collector efficiency) and a maximum saturated power of 6.67 mW/

$\mu \text{m}$

² or 1.17 mW/

$\mu \text{m}$

of emitter length in a common-emitter configuration. Devices operate stably under large-signal conditions, with voltages nearly twice higher than those for peak small-signal performance.

#	Concept	H-Index	Publications	Citations
1	Engineering	1	1	42
2	Applied Physics	1	1	42
3	Electrical Engineering	1	1	42
4	Microelectronics	1	1	42
5	Optoelectronics	1	1	42

	Year	Citations

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