Keonsoo Kim - Concepedia

Author

Keonsoo Kim

Samsung (South Korea)

Also Known As

Keon-Soo Kim, Keonsoo Kim

Publications

366

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)Sungkyunkwan University

About

Keonsoo Kim is an author at Samsung (South Korea) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	350
2	Electrical Engineering	9	9	350
3	Applied Physics	8	8	319
4	Computer Engineering	5	5	128
5	Materials Science	1	1	12

Keonsoo Kim

Publications

350

Citations

H-Index

Page 1

	Year	Citations
Impact of floating gate dry etching on erase characteristics in NOR flash memory W.H. Lee, Dongkyu Lee, Young-Ho Na, IEEE Electron Device Letters Non-volatile MemoryEngineeringNanoelectronicsErase CharacteristicsMemory Device	2002	93
Direct Field Effect of Neighboring Cell Transistor on Cell-to-Cell Interference of nand Flash Cell Arrays Min-Cheol Park, Keonsoo Kim, Jongho Park, IEEE Electron Device Letters Device ModelingNon-volatile MemoryElectrical EngineeringNeighboring Cell TransistorCell Transistor	2009	89
Integration Technology of 30nm Generation Multi-Level NAND Flash for 64Gb NAND Flash Memory Dong-Hwa Kwak, Jaekwan Park, Keonsoo Kim, EngineeringEmerging Memory TechnologyIntegrated CircuitsBreak-through Patterning TechnologyNand Flash Memory	2007	39
A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology Kitae Park, Oh-Suk Kwon, Sang-Yong Yoon, Non-volatile MemoryElectrical EngineeringEngineeringNand Flash ApplicationsNanoelectronics	2011	31
The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells Min Woo Park, Kang-Deog Suh, Keonsoo Kim, IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory Technology3D MemoryNanoelectronics	2007	28
A highly manufacturable integration technology for 27nm 2 and 3bit/cell NAND flash memory Choongho Lee, Suk‐Kang Sung, Dong-Hoon Jang, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureVpass Window	2010	22
The Effect of Negative $V_{\rm TH}$ of nand Flash Memory Cells on Data Retention Characteristics Min Woo Park, Eungjin Ahn, Eunsuk Cho, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringCell TransistorEngineeringStress-induced Leakage Current	2008	21
The Effect of Field Oxide Recess on Cell $V_{\rm TH}$ Distribution of nand Flash Cell Arrays Min-Cheol Park, Chang-Sub Lee, Sung‐Hoi Hur, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringEngineeringField Oxide RecessOxide Electronics	2008	15
Mobile ion-induced data retention failure in NOR flash memory cell W.H. Lee, Dongkyu Lee, Keonsoo Kim, IEEE Transactions on Device and Materials Reliability Non-volatile MemoryEngineeringSidewall SpacersData Retention FailureNanoelectronics	2001	12

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