J. Barak - Concepedia

Author

J. Barak

Israel Atomic Energy Commission ORCID

Also Known As

J Barak, J. Barak, Joseph Barak

112

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Israel Atomic Energy Commission Soreq Nuclear Research Center GSI Helmholtz Centre for Heavy Ion Research Fraunhofer Institute for Technological Trend Analysis Goddard Space Flight Center

About

J. Barak is an author at Israel Atomic Energy Commission specializing in engineering, physics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	42	1.3K
2	Applied Physics	23	34	1.2K
3	Natural Sciences	18	26	632
4	Medicine	2	2	84
5	Health Sciences	1	1	19

J. Barak

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs A. Akkerman, J. Barak, M. B. Chadwick, Radiation Physics and Chemistry Semiconductor TechnologyPhysicsApplied PhysicsSingle Event EffectsNiel Calculations	2001	123
Ion and electron track-structure and its effects in silicon: model and calculations A. Akkerman, J. Barak, Dimitris Emfietzoglou Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Ion ImplantationEngineeringPhysicsApplied PhysicsAtomic Physics	2004	86
Electron and Ion Tracks in Silicon: Spatial and Temporal Evolution Michael Murat, A. Akkerman, J. Barak IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringPhysicsSee Cross SectionsNanoelectronics	2008	77
Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects Robert A. Reed, Robert A. Weller, A. Akkerman, IEEE Transactions on Nuclear Science Radiation Transport ToolsEngineeringRadiation ExposureMonte Carlo MethodsSingle-particle Induced Failures	2013	65
Ion-track structure and its effects in small size volumes of silicon A. Akkerman, J. Barak IEEE Transactions on Nuclear Science Ion-track StructureElectrical EngineeringEnergy DepositionTrack StructureEngineering	2002	60
Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs Avner Haran, A. Jakšić, Nati Refaeli, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringContinuous OperationEngineeringNanoelectronics	2004	49
Monte Carlo calculations of electron transport in silicon and related effects for energies of 0.02–200 keV A. Akkerman, Michael Murat, J. Barak Journal of Applied Physics SemiconductorsSemiconductor DeviceEngineeringPhysicsApplied Physics	2009	43
New Partition Factor Calculations for Evaluating the Damage of Low Energy Ions in Silicon A. Akkerman, J. Barak IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringSrim CalculationsPhysics	2006	42
Analytical microdosimetry model for proton-induced SEU in modern devices J. Barak IEEE Transactions on Nuclear Science Electrical EngineeringTotal Ionizing DoseP+si Nuclear EventEngineeringPhysics	2001	42
Scaling of SEU mapping and cross section, and proton induced SEU at reduced supply voltage J. Barak, J. Levinson, A. Akkerman, IEEE Transactions on Nuclear Science Electrical EngineeringSeu MappingCross SectionNuclear PhysicsPhysics	1999	42

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